Review on Performance of Static Random Access Memory (SRAM)
نویسندگان
چکیده
منابع مشابه
Radiations On Static Random Access Memory Cell
With increased memory capacity usually comes increased bit line parasitice capacitance. This increased bit line capacitance in turn slows down voltage sensing and makes bit line voltage swing energy expensive resulting in slower more energy hungry memories. A full description of the various methods is beyond the scope of this article; instead, the focus is on providing primary developments that...
متن کاملLeakage power reduction techniques of 45 nm static random access memory (SRAM) cells
As the technology scales down to 90 nm and below, static random access memory (SRAM) standby leakage power is becoming one of the most critical concerns for low power applications. In this article, we review three major leakage current components of SRAM cells and also discuss some of the leakage current reduction techniques including body biasing, source biasing, dynamic VDD, negative word lin...
متن کاملX-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories
Silicon based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying von-Neumann computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-art computing systems, to a l...
متن کاملEnergy Efficient Novel Design of Static Random Access Memory Memory Cell in Quantum-dot Cellular Automata Approach
This paper introduces a peculiar approach of designing Static Random Access Memory (SRAM) memory cell in Quantum-dot Cellular Automata (QCA) technique. The proposed design consists of one 3-input MG, one 5-input MG in addition to a (2×1) Multiplexer block utilizing the loop-based approach. The simulation results reveals the excellence of the proposed design. The proposed SRAM cell achieves 16% ...
متن کاملLow Power March Memory Test Algorithm for Static Random Access Memories (TECHNICAL NOTE)
Memories are most important building blocks in many digital systems. As the Integrated Circuits requirements are growing, the test circuitry must grow as well. There is a need for more efficient test techniques with low power and high speed. Many Memory Built in Self-Test techniques have been proposed to test memories. Compared with combinational and sequential circuits memory testing utilizes ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IJARCCE
سال: 2015
ISSN: 2278-1021
DOI: 10.17148/ijarcce.2015.4291